july 2011 FDB390N15A n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDB390N15A rev. a2 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 150 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c,silicon limited) 27 a - continuous (t c = 100 o c,silicon limited) 19 i dm drain current - pulsed (note 1) 108 a e as single pulsed avalanche energy (note 2) 78 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 75 w - derate above 25 o c 0.5 w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 2.0 o c/w r ja thermal resistance, junction to ambient 62.5 FDB390N15A n-channel powertrench ? mosfet 150v, 27a, 39m features ? r ds(on) = 33.5m ( typ.)@ v gs = 10v, i d = 27a ? fast switching speed ? low gate charge ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is produced using fairchild semiconductors advance powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc converters ? synchronous rectification for telecommunication psu ? battery charger ? ac motor drives and uninterruptible power supplies ? off-line ups g s d d 2 -pak g s d
FDB390N15A n-channel powertrench ? mosfet FDB390N15A rev. a2 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quant ity FDB390N15A FDB390N15A d2-pak 330mm 24mm 800 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 150 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.1 - v/ o c i dss zero gate voltage drain current v ds = 120v, v gs = 0v - - 1 a v ds = 120v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2.0 - 4.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 27a - 33.5 39 m g fs forward transconductance v ds = 10v, i d = 27a (note 4) - 33 - s c iss input capacitance v ds = 75v, v gs = 0v f = 1mhz - 965 1285 pf c oss output capacitance - 96 130 pf c rss reverse transfer capacitance - 5.8 - pf c oss(er) energy related output capacitance v ds = 75v, i d = 27a 169 - pf q g(tot) total gate charge at 10v v ds = 75v, i d = 27a v gs = 10v (note 4,5) - 14.3 18.6 nc q gs gate to source gate charge 5.0 - nc q gs2 gate charge threshold to plateau - 2.0 - nc q gd gate to drain miller charge - 3.5 - nc esr equivalent series resistance (g-s) drain open,f = 1m hz - 1.4 - t d(on) turn-on delay time v dd = 75v, i d = 27a v gs = 10v, r gen = 4.7 (note 4,5) - 14 38 ns t r turn-on rise time - 10 30 ns t d(off) turn-off delay time - 20 50 ns t f turn-off fall time - 5 20 ns i s maximum continuous drain to source diode forward curr ent - - 27 a i sm maximum pulsed drain to source diode forward current - - 108 a v sd drain to source diode forward voltage v gs = 0v, i sd = 27a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 27a, v dd = 75v di f /dt = 100a/ s (note 4) - 63 - ns q rr reverse recovery charge - 131 - nc notes: 1. repetitive rating: pulse width limited by maximum ju nction temperature 2. starting t j = 25 c, l = 3 mh, i sd = 7.2 a 3. i sd 27a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature typ ical characteristics
FDB390N15A n-channel powertrench ? mosfet FDB390N15A rev. a2 www.fairchildsemi.com 3 typical performance char acteristics figure 1. on-region characteristics figure 2. transf er characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 5 1 10 100 200 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v 2 3 4 5 6 7 1 10 100 200 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.4 0.6 0.8 1.0 1.2 1.3 1 10 100 200 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 20 40 60 80 100 20 40 60 80 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.1 1 10 100 200 1 10 100 1000 2000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 4 8 12 16 0 2 4 6 8 10 *note: i d = 27a v ds = 30v v ds = 75v v ds = 120v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDB390N15A n-channel powertrench ? mosfet FDB390N15A rev. a2 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs.drain to source voltage figure 12. unclamped inductive switching capability -80 -40 0 40 80 120 160 200 0.92 0.96 1.00 1.04 1.08 1.12 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -80 -40 0 40 80 120 160 200 0.4 0.8 1.2 1.6 2.0 2.4 2.8 *notes: 1. v gs = 10v 2. i d = 27a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 175 0 5 10 15 20 25 30 r jc = 2.0 o c/w v gs = 10v i d , drain current [a] t c , case temperature [ o c ] 1 10 100 200 0.01 0.1 1 10 100 300 10ms 10 s 100 s 1ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 0 30 60 90 120 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 e oss , [ j ] v ds , drain to source voltage [ v ] 0.01 0.1 1 10 20 1 10 if r = 0 t av = (l) ( i as ) / ( 1.3*rated bv dss -v dd ) if r = 0 t av = (l/r)in [( i as *r ) / ( 1.3*rated bv dss -v dd ) +1 ] starting t j = 25 o c starting t j = 150 o c i as , avalanche current (a) t av , time in avalanche (ms) 12
FDB390N15A n-channel powertrench ? mosfet FDB390N15A rev. a2 www.fairchildsemi.com 5 typical performance characteristics (continued) figu re 13. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 3 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 2.0 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDB390N15A n-channel powertrench ? mosfet FDB390N15A rev. a2 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms
FDB390N15A n-channel powertrench ? mosfet FDB390N15A rev. a2 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDB390N15A n-channel powertrench ? mosfet FDB390N15A rev. a2 www.fairchildsemi.com 8 mechanical dimensions d 2 pak dimensions in millimeters
FDB390N15A n-channel powertrench ? mosfet FDB390N15A rev. a2 www.fairchildsemi.com 9 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such t rademarks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? auto-spm? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optihit? optologic ? optoplanar ? ? pdp spm? power-spm? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? the right technology for your success? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * serdes? uhc ? ultra frfet? unifet? vcx? visualmax? xs? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for pr oduct development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference infor mation only. anti-counterfeiting policy fairchild semiconductor corporations anti-counterf eiting policy. fairchilds anti-counterfeiting poli cy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semico nductor products are experiencing counterfeiting of their parts. customers who inadvertently purchase c ounterfeit parts experience many problems such as l oss of brand reputation, substandard performance, failed application, and increased cost of productio n and manufacturing delays. fairchild is taking str ong measures to protect ourselves and our customers from the proliferation of counterfeit parts. fairch ild strongly encourages customers to purchase fairc hild parts either directly from fairchild or from a uthorized fairchild distributors who are listed by country on our web page cited above. products customers buy e ither from fairchild directly or from authorized fa irchild distributors are genuine parts, have full traceabil ity, meet fairchilds quality standards for handing and storage and provide access to fairchilds full range of up-to-date technical and product information. fairc hild and our authorized distributors will stand beh ind all warranties and will appropriately address a nd warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance f or parts bought from unauthorized sources. fairchil d is committed to combat this global problem and encoura ge our customers to do their part in stopping this practice by buying direct or from authorized distri butors. rev. i55
|
